Study of polycrystalline bulk CuIn1-xGaxTe2
Identifieur interne : 002458 ( Main/Repository ); précédent : 002457; suivant : 002459Study of polycrystalline bulk CuIn1-xGaxTe2
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Abstract
Polycrystalline CuIn1-xGaxTe2 bulk films were synthesized by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te in a vacuum sealed quartz ampoule. The phase structure and composition of the bulk films were analysed by X-ray diffraction and energy-dispersive X-ray analysis, respectively. The bulk samples, of p-type conductivity, are found to be near-stoichiometric, polycrystalline, with tetragonal chalcopyrite structure, predominantly oriented along a direction perpendicular to the (1 1 2) plane. Photoluminescence spectra were recorded at 7 K and 700 mW to characterize the defects and the structural quality. The main peak as a function of composition has been studied.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Study of polycrystalline bulk CuIn<sub>1-x</sub>Ga<sub>x</sub>Te<sub>2</sub></title><author><name sortKey="Aissaoui, O" uniqKey="Aissaoui O">O. Aissaoui</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>LESIMS, Département de Physique, Université de Annaba, BP 12</s1><s2>23200 Sidi Amar</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>23200 Sidi Amar</wicri:noRegion></affiliation></author><author><name sortKey="Mehdaoui, S" uniqKey="Mehdaoui S">S. Mehdaoui</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>LESIMS, Département de Physique, Université de Annaba, BP 12</s1><s2>23200 Sidi Amar</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>23200 Sidi Amar</wicri:noRegion></affiliation></author><author><name sortKey="Bechiri, L" uniqKey="Bechiri L">L. Bechiri</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>LESIMS, Département de Physique, Université de Annaba, BP 12</s1><s2>23200 Sidi Amar</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>23200 Sidi Amar</wicri:noRegion></affiliation></author><author><name sortKey="Benabdeslem, M" uniqKey="Benabdeslem M">M. Benabdeslem</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>LESIMS, Département de Physique, Université de Annaba, BP 12</s1><s2>23200 Sidi Amar</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>23200 Sidi Amar</wicri:noRegion></affiliation></author><author><name sortKey="Benslim, N" uniqKey="Benslim N">N. Benslim</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>LESIMS, Département de Physique, Université de Annaba, BP 12</s1><s2>23200 Sidi Amar</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>23200 Sidi Amar</wicri:noRegion></affiliation></author><author><name sortKey="Amara, A" uniqKey="Amara A">A. Amara</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>LEREC, Département de Physique, Université de Annaba, BP 12</s1><s2>23200 Sidi Amar</s2><s3>DZA</s3><sZ>6 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>23200 Sidi Amar</wicri:noRegion></affiliation></author><author><name sortKey="Otmani, A" uniqKey="Otmani A">A. Otmani</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>L.R.PC Surfaces et interfaces, Faculté des sciences, BP 26, El Hadaek Skikda 21200</s1><s2>Université de Skikda</s2><s3>DZA</s3><sZ>7 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>Université de Skikda</wicri:noRegion></affiliation></author><author><name sortKey="Djessas, K" uniqKey="Djessas K">K. Djessas</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>Laboratoire de Mathématiques et Physique des Systèmes (MEPS), Université de Perpignan, 52 Avenue Paul Alduy</s1><s2>66860 Perpignan</s2><s3>FRA</s3><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Perpignan</settlement></placeName></affiliation></author><author><name sortKey="Portier, X" uniqKey="Portier X">X. Portier</name><affiliation wicri:level="4"><inist:fA14 i1="05"><s1>CIMAP-Centre de recherche sur les ions, les matériaux et la photonique, UMR 6252 /ENSICAEN/Université de Caen Basse Normandie, 6 Boulevard du Maréchal Juin</s1><s2>14050 Caen</s2><s3>FRA</s3><sZ>9 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Basse-Normandie</region><settlement type="city">Caen</settlement></placeName><orgName type="university">Université de Caen Basse-Normandie</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0016778</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0016778 INIST</idno><idno type="RBID">Pascal:11-0016778</idno><idno type="wicri:Area/Main/Corpus">003911</idno><idno type="wicri:Area/Main/Repository">002458</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-2313</idno><title level="j" type="abbreviated">J. lumin.</title><title level="j" type="main">Journal of luminescence</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chalcopyrite structure</term><term>Chemical composition</term><term>Copper Gallium Indium Tellurides Mixed</term><term>Dispersive spectrometry</term><term>Lattice parameters</term><term>Microstructure</term><term>Phase composition</term><term>Photoluminescence</term><term>Polycrystals</term><term>Tetragonal lattices</term><term>Vegard law</term><term>XRD</term><term>p type semiconductor</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Composition phase</term><term>Diffraction RX</term><term>Spectrométrie dispersive</term><term>Microstructure</term><term>Photoluminescence</term><term>Composition chimique</term><term>Paramètre cristallin</term><term>Loi Vegard</term><term>Cuivre Gallium Indium Tellurure Mixte</term><term>Polycristal</term><term>Semiconducteur type p</term><term>Réseau quadratique</term><term>Structure chalcopyrite</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Polycrystalline CuIn<sub>1-x</sub>Ga<sub>x</sub>Te<sub>2</sub> bulk films were synthesized by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te in a vacuum sealed quartz ampoule. The phase structure and composition of the bulk films were analysed by X-ray diffraction and energy-dispersive X-ray analysis, respectively. The bulk samples, of p-type conductivity, are found to be near-stoichiometric, polycrystalline, with tetragonal chalcopyrite structure, predominantly oriented along a direction perpendicular to the (1 1 2) plane. Photoluminescence spectra were recorded at 7 K and 700 mW to characterize the defects and the structural quality. The main peak as a function of composition has been studied.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-2313</s0></fA01><fA02 i1="01"><s0>JLUMA8</s0></fA02><fA03 i2="1"><s0>J. lumin.</s0></fA03><fA05><s2>131</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Study of polycrystalline bulk CuIn<sub>1-x</sub>Ga<sub>x</sub>Te<sub>2</sub></s1></fA08><fA11 i1="01" i2="1"><s1>AISSAOUI (O.)</s1></fA11><fA11 i1="02" i2="1"><s1>MEHDAOUI (S.)</s1></fA11><fA11 i1="03" i2="1"><s1>BECHIRI (L.)</s1></fA11><fA11 i1="04" i2="1"><s1>BENABDESLEM (M.)</s1></fA11><fA11 i1="05" i2="1"><s1>BENSLIM (N.)</s1></fA11><fA11 i1="06" i2="1"><s1>AMARA (A.)</s1></fA11><fA11 i1="07" i2="1"><s1>OTMANI (A.)</s1></fA11><fA11 i1="08" i2="1"><s1>DJESSAS (K.)</s1></fA11><fA11 i1="09" i2="1"><s1>PORTIER (X.)</s1></fA11><fA14 i1="01"><s1>LESIMS, Département de Physique, Université de Annaba, BP 12</s1><s2>23200 Sidi Amar</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>LEREC, Département de Physique, Université de Annaba, BP 12</s1><s2>23200 Sidi Amar</s2><s3>DZA</s3><sZ>6 aut.</sZ></fA14><fA14 i1="03"><s1>L.R.PC Surfaces et interfaces, Faculté des sciences, BP 26, El Hadaek Skikda 21200</s1><s2>Université de Skikda</s2><s3>DZA</s3><sZ>7 aut.</sZ></fA14><fA14 i1="04"><s1>Laboratoire de Mathématiques et Physique des Systèmes (MEPS), Université de Perpignan, 52 Avenue Paul Alduy</s1><s2>66860 Perpignan</s2><s3>FRA</s3><sZ>8 aut.</sZ></fA14><fA14 i1="05"><s1>CIMAP-Centre de recherche sur les ions, les matériaux et la photonique, UMR 6252 /ENSICAEN/Université de Caen Basse Normandie, 6 Boulevard du Maréchal Juin</s1><s2>14050 Caen</s2><s3>FRA</s3><sZ>9 aut.</sZ></fA14><fA20><s1>109-113</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>14666</s2><s5>354000193947260210</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>28 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0016778</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of luminescence</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Polycrystalline CuIn<sub>1-x</sub>Ga<sub>x</sub>Te<sub>2</sub> bulk films were synthesized by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te in a vacuum sealed quartz ampoule. The phase structure and composition of the bulk films were analysed by X-ray diffraction and energy-dispersive X-ray analysis, respectively. The bulk samples, of p-type conductivity, are found to be near-stoichiometric, polycrystalline, with tetragonal chalcopyrite structure, predominantly oriented along a direction perpendicular to the (1 1 2) plane. Photoluminescence spectra were recorded at 7 K and 700 mW to characterize the defects and the structural quality. 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